Moscow – The Far Eastern Federal University in Russia announced that a Russian-Chinese research team has developed a new type of high-speed electronic memory called “SOT-MRAM.” This memory can retain data even when the power is cut, paving the way for a new generation of high-performance smartphones and computers.
According to the university, the new technology allows data to be recorded at speeds many times faster than current flash memory devices, while consuming much less energy. This makes it a promising option for the future of electronic devices.
Researchers explained that they managed to overcome a major obstacle in developing this kind of memory: the previous need for an external magnetic field to switch memory cells, which complicated device design. They created a three-layer structure that includes two magnetic layers, one magnetized horizontally and the other vertically, separated by an ultra-thin tungsten film just one nanometer thick—about one one-hundred-thousandth the width of a human hair.
Study results showed that the thin tungsten layer generates a spin current with about 15% efficiency, which matches or exceeds the efficiency of thicker layers made from heavy metals. This improves memory performance and reduces energy consumption.
The research team plans to improve the materials and structures used to further enhance performance. They will also explore integrating this technology into the current manufacturing of electronic components, with the goal of commercial applications in the future.